All‐Around SiN Stressor for High and Homogeneous Tensile Strain in Germanium Microdisk Cavities

Abstract

An all-around stressor approach is presented to introduce homogeneous and high tensile strain, both in-plane and vertically, into n-doped germanium microdisks. A maximum biaxial strain up to 1.5% is achieved, close to the requirement to obtain a direct band gap germanium. The possibilities to obtain in this configuration modal optical gain in germanium microdisk cavities are discussed.