All-2D architectures toward advanced electronic and optoelectronic devices

Abstract

Conventional Si-based complementary metal–oxide–semiconductor (CMOS) techniques are suffering intrinsic limitations induced by the continuous downscaling of physical dimensions, notably below the sub-10 nm technology node. 2D layered materials (2DLMs) are emerging materials carrying an exceptionally wide range of attributes, from metals, to semiconductors, and to insulators. The ultimate vertical dimension brings natural immunity to short-channel effects and high flexibility. In addition, the dangling-bond-free character enables random stacking of 2DLMs to build delicate artificial heterostructures. It gives birth to an advanced research domain denoted as all-2D electronics and optoelectronics, where devices are built of 2DLMs. The intact, atomically sharp interfaces and synergies of various building blocks lead to intriguing functionalities and ameliorated device performances. It provides an access to shape the future of nano-electronics and nano-optoelectronics. In this review, we begin with an overview on the fundamentals and merits of all-2D architectures. Then, we summarize the development of all-2D electronic devices, including field-effect transistors, logic gates, gas/tactile sensors, and hot electron transistors. Subsequently, we survey the evolution of all-2D photodetectors of various structures. Finally, we identify the critical challenges standing in the way of further development and lay out associated strategies addressing them, which aim to provide guidelines toward advancing this fascinating landscape.