All‐Transfer Electrode Interface Engineering Toward Harsh‐Environment‐Resistant MoS2 Field‐Effect Transistors (Adv. Mater. 18/2023)

Abstract

MoS2 Transistors As reported in article number 2210735, Yonghuang Wu, Zeqin Xin, Kai Liu, and co-workers build harsh-environment-resistant MoS2 transistors by engineering electrode–channel interfaces. The transistors are resistant to high temperature of 350 °C, 100% relative humidity, and oxidizing environments, paving the way toward nanoscale devices working in harsh environments, for example in aerospace applications.