All solution-processed organic single-crystal transistors with high mobility and low-voltage operation

Abstract

High-mobility organic single-crystal field-effect transistors of 3,11-didecyldinaphtho[2,3-d:2′,3′-d′]benzo[1,2-b:4,5-b′]-dithiophene (C10-DNBDT) operating at low driving voltage are fabricated by an all-solution process. A field-effect mobility as high as 6.9cm2/Vs is achieved at a driving voltage below 5V, a voltage as low as in battery-operated devices, for example. A low density of trap states is realized at the surface of the solution-processed organic single-crystal films, so that the typical subthreshold swing is less than 0.4V/decade even on a reasonably thick amorphous polymer gate dielectrics with reliable insulation. The high carrier mobility and low interface trap density at the surface of the C10-DNBDT crystals are both responsible for the development of the high-performance all-solution processed transistors.