All‐solution‐printed oxide thin‐film transistors by direct thermal nanoimprinting for use in active‐matrix arrays

Abstract

All‐solution‐printed oxide thin‐film transistors (TFTs) were fabricated using a direct thermal nanoimprinting technique termed nanorheology printing (n‐RP). n‐RP is a printing technology that utilizes the thermoplastic properties of oxide gels. We prepared such thermoplastic oxide gels and developed a suitable alignment system. Using this system, TFTs designed for use in active‐matrix arrays were fabricated with a high alignment accuracy of less than 5 µm. We succeeded in incorporating these TFTs into all‐solution‐printed oxide TFT arrays, and the operation of the transistors in the arrays was confirmed.