All-silicon TM polarizer covering the 1260-1675 nm bandwidth using a band engineered subwavelength grating waveguide.

Abstract

A TM polarizer working for whole optical communication bands with high performance is proposed on a 220-nm-thick silicon-on-insulator (SOI) platform. The device is based on polarization-dependent band engineering in a subwavelength grating waveguide (SWGW). By utilizing an SWGW with a relatively larger lateral width, an ultra-broad bandgap of ∼476 nm (1238 nm-1714nm) is obtained for the TE mode, while the TM mode is well supported in this range. Then, a novel tapered and chirped grating design is adopted for efficient mode conversion, which results in a polarizer with a compact footprint (3.0 µm × 18 µm), low insertion loss (IL < 1.15 dB) and high polarization extinction ratio (PER > 21 dB) covering O-U bands (1260 nm-1675 nm). Experimental results show that the fabricated device has an IL < 1.0 dB and PER > 22 dB over a 300- nm bandwidth, which is limited by our measurement setup. To the best of our knowledge, no TM polarizer on the 220-nm SOI platform with comparable performance covering O-U bands has ever been reported.