Abstract
We demonstrate an all-silicon photodetector working at telecom wavelength. The device is a simple metal-semiconductor-metal detector fabricated on silicon-on-insulator. A two-dimensional photonic crystal nanocavity (Q=60,000) is used to increase the response that arises from the linear and two-photon absorption of silicon. The responsivity of the detector is about 20 mA/W and its bandwidth is larger than 1 GHz.
Highlights
The great interest in all-optical interconnects is triggered by the idea that it should lead to the conception of small, low-cost devices that will convey and process numerical data at very low working power [1]
High responsivities around 1 A/W and high speed operation above 40 GHz have been recently demonstrated using CMOS integrated waveguides with germanium as the absorbing material [3,4,5,6]
We show that a simple SOI photonic crystal structure with a metalsemiconductor-metal (MSM) junction can achieve photodetection in the telecom band
Summary
The great interest in all-optical interconnects is triggered by the idea that it should lead to the conception of small, low-cost devices that will convey and process numerical data at very low working power [1]. Devices based on the linear absorption related to the introduction of defects states in implanted silicon have been employed to demonstrate high-responsivity p-i-n photodiodes [7,8,9] The latter method can be used in conjunction with a resonator to improve performances [10]. The experimental quality factors (Q) of these can be higher than 2 million with a mode volume still comparable to ( / n)3 [13,14,15] In these conditions, linear absorption and TPA are enhanced and become detectable for an input power lower than 1 μW [16]. We show that a simple SOI photonic crystal structure with a metalsemiconductor-metal (MSM) junction can achieve photodetection in the telecom band This all-silicon photodetector entirely resting on silica exhibits a responsivity of 17 mA/W and a frequency cutoff larger than 1 GHz
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