All selective metalorganic vapor phase epitaxy grown buried-heterostructure laser diodes with selectively oxidized AlInAs current-confinement layer

Abstract

A laser diode structure, consisting of a 1.3 μm all selective metalorganic vapor phase epitaxy grown buried-heterostructure (ASM-BH) laser diode with a selectively oxidized-AlInAs current-confinement layer, is proposed and demonstrated. As the lateral oxidization is automatically stopped near the active layer by self-aligned AlInAs, a narrow current aperture with excellent controllability is realized. The fabricated laser diode shows low continuous-wave threshold current of 2.5 and 7.5 mA at 25 and 85 °C, respectively, for 250-μm-long devices with HR(75%)/HR(95%) coatings. The maximum operating temperature is higher than 145 °C.