All regimes mobility extraction using split C–V technique enhanced with charge-sheet model

Abstract

In this paper, carrier effective mobility is accurately extracted from weak to strong inversion and from ohmic to saturation regimes by pairing the split C–V technique with charge-sheet model. In weak inversion, both electron and hole effective mobility are found to be constant and VDS independent. Moreover, effective mobility extracted by this new method is modeled in all regimes using already published models extended up to the saturation regime.