Abstract
We report the successful combination of digital, direct-writing techniques, such as inkjet printing and femtosecond laser writing in order to fabricate megahertz operating, all-polymer FETs on flexible substrates without the use of any mask. By a control of the layout of the device, maximizing the ratio between the channel area with respect to the total gate overlap area through a simple interdigitated scheme, the frequency of transition ${f}_{T}$ for an n-type polymer FET can be enhanced up to 4.9 MHz.
Highlights
O RGANIC semiconductors have been for long representing one of the most interesting options for the development of large-area and flexible electronics applications, spanning from lightweight, portable electronic devices to healthcare and wearable systems [1]–[5]
We demonstrate all polymer FETs fabricated by combining digital, direct writing techniques, such as inkjet and laser machining, which achieve a frequency of transition fT, i.e., the frequency at which the current gain is equal to 1, of 4.9 MHz
We exploit the combination of inkjet printing and fs-laser ablation, which we have previously shown to be effective in realizing metallic electrodes separated by a high-resolution channel, with lengths from the micrometer down to sub-micrometer range [35]
Summary
O RGANIC semiconductors have been for long representing one of the most interesting options for the development of large-area and flexible electronics applications, spanning from lightweight, portable electronic devices to healthcare and wearable systems [1]–[5]. This paper has supplementary downloadable multimedia material available at http://ieeexplore.ieee.org provided by the authors This includes supplementary data, including details on overlap geometry and correlation with fT and static electrical characterization of FETs. The total size of the file is 4.62 MB. Poor maximum operating frequencies are typically associated with printed polymer devices for flexible electronics, introducing strong limitations to the possible applications [29] To overcome such limitation several high resolution processes, characterized by the different levels of scalability, have been recently proposed for the patterning of organic FET electrodes, such as self-aligned inkjet printing [30], highresolution gravure printing [31], and roll-to-roll compatible nanoimprinting [32]–[34]. Such result can pave the way for the fabrication of flexible logic circuits with enhanced clock rate, for applications requiring fast addressing circuits, and for enhanced bandwidth amplifiers to enable integrated signal amplification in printed wearable and large-area sensors
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