All-perovskite transparent high mobility field effect using epitaxial BaSnO3 and LaInO3

Useong Kim,Chanjong Ju,Jisung Park,Young Mo Kim,Jaejun Yu,Chulkwon Park,Taewoo Ha,Jae Hoon Kim,Kookrin Char,Namwook Kim

doi:10.1063/1.4913587

Useong Kim, Chanjong Ju + Show 8 more

Open Access

https://doi.org/10.1063/1.4913587

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Journal: APL materials	Publication Date: Feb 25, 2015
Citations: 110	License type: CC BY 3.0

Affiliation: Seoul National University, Yonsei University

Abstract

We demonstrate an all-perovskite transparent heterojunction field effect transistor made of two lattice-matched perovskite oxides: BaSnO3 and LaInO3. We have developed epitaxial LaInO3 as the gate oxide on top of BaSnO3, which were recently reported to possess high thermal stability and electron mobility when doped with La. We measured the dielectric properties of the epitaxial LaInO3 films, such as the band gap, dielectric constant, and the dielectric breakdown field. Using the LaInO3 as a gate dielectric and the La-doped BaSnO3 as a channel layer, we fabricated field effect device structure. The field effect mobility of such device was higher than 90 cm2 V−1 s−1, the on/off ratio was larger than 107, and the subthreshold swing was 0.65 V dec−1. We discuss the possible origins for such device performance and the future directions for further improvement.

Highlights

We demonstrate an all-perovskite transparent heterojunction field effect transistor made of two lattice-matched perovskite oxides: BaSnO3 and LaInO3
We have developed epitaxial LaInO3 as the gate oxide on top of BaSnO3, which were recently reported to possess high thermal stability and electron mobility when doped with La
The most fundamental building block of a complex circuitry in the field of electronics, among the diverse forms of devices, is a field effect transistor (FET) which controls the conductivity of channel by applying voltage to the gate electrode

Summary

Introduction

We demonstrate an all-perovskite transparent heterojunction field effect transistor made of two lattice-matched perovskite oxides: BaSnO3 and LaInO3. We demonstrate the excellent performance of our all-perovskite FET made of LIO/BSO epitaxial heterojunction in terms of three conventional parameters: field effect mobility (μFE), on/off ratio (Ion/Ioff), and subthreshold swing (S).

Results

Conclusion