All-optical valley switch and clock of electronic dephasing.

Abstract

2D materials with broken inversion symmetry posses an extra degree of freedom, the valley pseudospin, that labels in which of the two energy-degenerate crystal momenta, K or K', the conducting carriers are located. It has been shown that shining circularly-polarized light allows to achieve close to 100% of valley polarization, opening the way to valley-based transistors. Yet, switching of the valley polarization is still a key challenge for the practical implementation of such devices due to the short valley lifetimes. Recent progress in ultrashort laser technology now allows to produce trains of attosecond pulses with controlled phase and polarization between the pulses. Taking advantage of such technology, we introduce a coherent control protocol to turn on, off and switch the valley polarization at faster timescales than electron-hole decoherence and valley depolarization, that is, an ultrafast optical valley switch. We theoretically demonstrate the protocol for hBN and MoS2 monolayers calculated from first principles. Additionally, using two time-delayed linearly-polarized pulses with perpendicular polarization, we show that we can extract the electronic dephasing time T2 from the valley Hall conductivity.