Abstract
AbstractThis paper describes the method for producing a nanobridge‐type SQUID, the LsIo/ϕO ratio of which can be regulated to an optimal value at the liquid He temperature (4.2 K), and the properties of the SQUID. An epitaxial NbN film is produced by the reactive RF magnetron sputtering method for use as the electrode material, and an MgO film, which is thermally stable, is used as the insulating barrier. The Josephson nanobridges are formed in MgO film of the NbN/MgO (5‐10 nm)/NbN junction of about 4 × 4 μm2 in area by field emission in the liquid He environment. The junction resistance before the application of electric field is very high, that is, 1 MΩ or higher. Needless to say, Josephson current is absent in the junction. The critical current can easily be regulated to a desired value by varying the applied voltage. The produced SQUID exhibits a high stability to the heat cycle test (300 K‐4.2 K) which is carried out 50 to 60 times for about 2 years.
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