All MOCVD grown 850-nm-wavelength refractive-index-guided semiconductor-buried vertical-cavity surface-emitting lasers with p/n-InGaP current blocking layers

Abstract

All metal-organic chemical vapor deposition (MOCVD) grown 850-nm-wavelength refractive-index-guided semiconductor-buried vertical-cavity surface-emitting laser is proposed and their performance is investigated. P/n-InGaP current-blocking region enables both selective regrowth and the formation of refractive-index-guided region which surrounds multiquantum-well active/core regions. We have achieved room temperature CW operation of the new types of vertical-cavity surface-emitting lasers. The minimum threshold current was 9.5 mA with 18 /spl mu/m square mesa size at 30/spl deg/C. The device lased at up to 70/spl deg/C, and the maximum output power exceeds 1 mW at above 30/spl deg/C. The near field pattern indicates the single-lobed output beam at low bias current.