Abstract
In this work, all group-IV band-to-band lasers based on SiGeSn/GeSn/SiGeSn multi-quantum-well structures were demonstrated. Lasing performance was investigated via two 4-well samples. The thinner GeSn well sample exhibits a maximum lasing temperature of 20 K and a threshold of 55 kW/cm2 at 10 K, while the thicker well sample features a higher maximum operating temperature of 90 K and lower lasing thresholds of 25 and 62 kW/cm2 at 10 and 77 K, respectively. The distinct results were tentatively interpreted mainly by the difference of gain volume. This result provides guidance for the future GeSn quantum well laser optimization for higher performance.
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