All-GaN Power Integration: Devices to Functional Subcircuits and Converter ICs

Abstract

This article reports the Au-free GaN power integration platform and a complete integration scheme from devices to functional subcircuits and to application-oriented GaN converter ICs. The design and experimental demonstration of all-GaN dc-dc converter IC with high level of integration is presented. Through the developed GaN power integration platform, devices are monolithically integrated and functional subcircuits are demonstrated, which have realized expected application-oriented functions and are feasible for high-level integration. The all-GaN converter IC with monolithically integrated high-side gate driver, pulse-width modulation (PWM) feedback controller, and overcurrent protection circuits are proposed, numerically analyzed, experimentally demonstrated, and characterized. It can realize stable 10-V output with constant output ripples below 4% from 15-30-V input line voltage. Stable output with constant ripples can be maintained according to the designed feedback control when input and load conditions are abruptly changed. When subjected to over-current incident, the converter IC can be protected according to the desired over-current threshold values within one duty cycle period. The developed all-GaN power integration platform, together with functional subcircuits and dc-dc converter IC, can be a practical verification of all-GaN IC scheme oriented toward power conversion application, and a useful reference for all-GaN IC designs.