Abstract
AbstractThe fabrication and optical characterization are reported of MOVPE‐grown GaAs bistable étalon with GaAs/AlAs integrated mirrors. A 4 mW threshold power and a 2:1 reflectivity contrast are observed. Quasi‐continuous operation is observed in relation with thermal dissipation improvement when the substrate is removed. Two‐dimensional arrays of individual devices are fabricated and buried with Al0.2Ga0.8As for electrical and optical confinement. A theoretical model is also described which calculates the temperature distribution by an iterative propagator method.
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