Abstract
Spin logic devices based on domain wall (DW) motion offer flexible architectures to store and carry logic information in a circuit. In this device concept, information is encoded in the magnetic state of a magnetic track shared by multiple magnetic tunnel junctions (MTJs) and is processed by DW motion. Here, we demonstrate that all-electrical control of such nanoscale DW-based logic devices can be realized using a novel MTJ stack. In addition to field-driven motion, which is isotropic, we show the directional motion of DWs driven by current, a key requirement for logic operation. Full electrical control of an AND logic gate using DW motion is demonstrated. Our devices are fabricated in imec's 300-mm CMOS fab on full wafers, which clears the path for large-scale integration. This proof of concept, thus, offers potential solutions for high-performance and low-power DW-based devices for logic and neuromorphic applications.
Highlights
A LTHOUGH magnetic phenomena for logic and memory were studied since the 1970s, they were surpassed by the success of industrial Si-based devices
To overcome the challenges of applying the present spin-transfer torque (STT)-MRAM stack design [see Fig. 1(a)] for domain wall (DW) device integration, we developed DW-based devices using a novel magnetic tunnel junctions (MTJs) stack that incorporates the second FL into a conventional MTJ stack for DW transport [see Fig. 1(b)]
The role of the spacer is twofold: 1) it decouples the crystallization between CoFeB and the DW conduit and 2) it enables strong ferromagnetic coupling between CoFeB and the DW conduit to behave as a single ferromagnet
Summary
A LTHOUGH magnetic phenomena for logic and memory were studied since the 1970s, they were surpassed by the success of industrial Si-based devices. The need for a magnetic field to perform write operations in hard-disk drives was replaced by spin-transfer torque (STT), a capability to electrically change the magnetic state of a nanomagnet. This effect allows all-electrical operation of spintronic devices at a very low dimension. Parkin et al proposed a magnetic storage device in 2008 based on the transport of magnetic domain walls (DWs) [6] In this racetrack memory, information is densely packed in magnetic domains in a long magnetic track and is synchronously shifted by the application of an in-plane current (STT/SOT). RAYMENANTS et al.: ALL-ELECTRICAL CONTROL OF SCALED SPIN LOGIC DEVICES BASED ON DOMAIN WALL MOTION. We overcome one of many hurdles to achieve the full technological realization of magnetic devices that hold great potential for future logic and memory devices
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