All-dry siloxane based resist system: Plasmainduced chemical vapor deposition and reactive ion etch development

Abstract

We investigated and demonstrated the plasma induced chemical vapor deposition and reactive ion etch development of highly silicon enriched resist layers. There is no need for post deposition silicon enrichment. Deposition and development have been performed in conventional parallel plate reactors. The resist is sensitive to deep-UV and electron beam exposure with 150 mJ/cm 2 (193 nm) and 150 μC/cm 2 (20 keV) photospeed respectively. Depending on the development parameters the exposure characteristic can be reversed from negative to positive. Possible applications range from top imaging layer in a bilayer resist system to a stand alone layer in selective etch processes which also use selectivity to SiO 2 .