All‐Carbon Electronic Devices Fabricated by Directly Grown Single‐Walled Carbon Nanotubes on Reduced Graphene Oxide Electrodes

Abstract

Being free from the harsh post-growth treatments in strong acids, long time sonication, etc., directly grown single-walled carbon nanotubes (SWCNTs) preserve their pristine structures and intrinsic properties, which make them ideal for highperformance electronic devices. [ 1–9 ] Integration of directly grown SWCNTs into such addressable devices is a crucial step and requirement for both fundamental studies and applications. Two strategies, i.e., fabrication of metal electrodes on CNTs [ 5 , 7 , 10 ] and direct growth of CNTs between the pre-fabricated electrodes, [ 3 , 4 , 11 ] are normally used to fabricate the directly grown CNT-based devices. Although the fi rst strategy is popular and commonly used, the shadow mask and/or the use of photoresist may contaminate or destroy CNTs, leading to a low performance or even failure of devices. [ 3 ] The second strategy possesses some advantages, such as no CNT purifi cation and no photolithography required. This could be a better choice to produce clean and high-performance CNT-based devices, since the pristine structures and intrinsic properties of the grown CNTs are preserved. Despite the fact that many attempts have been reported, [ 3 , 4 , 9 , 11 ]