All About the Interface: Do Residual Contaminants at A High‐Quality h‐BN Monolayer Perylene Diimide Interface Cause Charge Trapping? (Adv. Mater. Interfaces 10/2022)

Abstract

Charge Transport in Organic Field-Effect Transistors In article number 2101701, Lukas Renn, Thomas Weitz, and co-workers develop organic transistor devices consisting of a monolayer-thin perylene-diimide n-type semiconductor on a rectangular shaped h-BN flake. For some devices the semiconducting film is encapsulated in between h-BN layers by stamping an additional h-BN flake on top. Charge transport measurements show signs of interfacial trapping, despite the trap-free h-BN substrate, suggesting interfacial contaminants are present.