Abstract
A study of the room temperature gas-phase interactions between gallium and indium alkyls was undertaken using a specially designed mass spectrometer sampling system, mounted on a conventional, low pressure organometallic vapor phase epitaxial reactor. Mixtures of triethylindium with triethylgallium were investigates. Both combinations formed addition compounds; moreover, the triethylindium-trimethygallium mizture also underwent alkyl exchange. The effect of these admixtures on the reaction between triethylindium and arsine was also investigated, and both admixtures showed reduced reactivity towards arsine. A structure for the addition compound, consistent with our observations, was proposed.
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