Year-end Sale % OFF 
Abstract
The paper presents a new strategy for cleaning of silicon wafers. A novel class of chelating agents added to alkaline cleaning mixtures provides promising performance without negative effects such as metal redeposition due to residual metal contamination of the cleaning solution. The superior capability of the new cleaning process is confirmed by the results obtained from wafer surface metal analysis as well as from minority carrier lifetime and diffusion length measurements and gate oxide integrity tests. Particle densities and surface roughness are not influenced by the presence of the chelating agents in the cleaning solution. TOF–SIMS measurements do not indicate any deposition of chelating agent on the wafer surface. With this type of modified SC-1 cleaning procedure the acid SC-2 step used in conventional RCA cleans to remove the metals deposited in the preceding SC-1 step is unnecessary resulting in substantial cost savings with respect to chemicals, waste, equipment and space.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
