AlInN/InN metal oxide semiconductor heterostructure field effect transistor

Abstract

AbstractThis paper describes a novel AlInN/InN metal‐oxide‐semiconductor heterojunction field effect transistor (MOSHFET) as a promising candidate for future high performance microwave devices. The transport properties such as channel mobility and velocity‐field characteristics of the proposed AlInN/InN MOSHFET are calculated using Monte Carlo simulation. The DC and high frequency performances are assessed using an analytical model. The highest mobility is found to be 8.1×104 cm2V–1s–1 at a sheet carrier concentration of 8.79×1012cm–2. The peak drift velocity obtained for the device is 8.3×107 cm/s at the field of 66 kV/cm. The maximum cut‐off frequency, transconductance and drain current have been found 160 GHz, 280 mS/mm, and 879 mA/mm, respectively, for a gate length of 0.25 μm. The calculated results are in good agreement with the published results of GaN MOSHFET (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)