AlInN for Vertical Power Electronic Devices

Abstract

The known benefits and challenges of AlInN as a next-generation power electronic semiconductor are presented. Al x In1− x N is lattice matched to GaN at ${x} = {0.82}$ and has the advantages of an available substrate, a wide bandgap (~4.4 eV), and high mobility (~450 cm2 $/\text {V} \cdot \text {s}$ ). The power figure of merit (FOM), determined using empirical and theoretical values of mobility and estimated critical electric fields determined from reported bandgaps, spans from ~20% to 130% times greater than GaN. In order to realize and precisely determine these high AlInN FOM values, experimental challenges will need to be overcome such as polarization-induced electric fields and bandgap discontinuities at AlInN/GaN interfaces, and controlling carrier concentration levels.