AlInGaN/GaN double-channel FinFET with high on-current and negligible current collapse

Abstract

In this work, we fabricated AlInGaN/GaN FinFETs and compare electrical performances with those of AlGaN/GaN FinFETs in different channel structures, such as single and double channel. The double-channel structure is promising to compensate for the degradation of the drain current density caused by the fin structure, as well as the FinFET structure is suitable to control the double-channel structure. The fabricated AlInGaN/GaN double channel FinFETs exhibit considerably higher maximum drain current of 290 mA/mm than those of AlGaN/GaN FinFETs such as 245 mA/mm and 165 mA/mm of double- and single-channel FinFETs, respectively. This is because of the high electron density caused by the strong polarization charge of AlInGaN/GaN heterostructure and double channel structure. Moreover, the double-channel FinFETs effectively suppress the current collapse. In conclusion, the AlInGaN/GaN double-channel fin structure is a very promising candidate for the GaN-based RF power applications.