Alignment method combining interference lithography with anisotropic wet etch technique for fabrication of high aspect ratio silicon gratings.

Abstract

A method was developed for aligning interference fringes generated in interference lithography to the vertical {111} planes of <110> oriented silicon wafers. The alignment error is 0.036°. This high precision method makes it possible to combine interference lithography with anisotropic wet etch technique for the fabrication of high aspect ratio silicon gratings with extremely smooth sidewalls over a large sample area. With this alignment method, 320 nm and 2 μm period silicon gratings have been successfully fabricated. The highest aspect ratio is up to 100. The sample area is about 50 mm × 60 mm. The roughness (root mean square) of the sidewall is about 0.267 nm.