Alignment control of self-assembling Si quantum dots

Abstract

We have demonstrated the formation of one-dimensionally aligned self-assembling silicon quantum dots (Si-QDs) by low-pressure (LP) CVD using pure monosilane (SiH4) gas. Formation of Si-QDs on line-patterned SiO2 formed on p-Si(100) after low-temperature oxidation was carried out. From AFM images taken after LPCVD, we confirmed high-density Si-QDs formation with an areal density as high as ∼1011 cm−2 on the OH-terminated SiO2-line while dot density as low as ∼1010 cm−2 on as-grown SiO2. We also confirmed that, with a decreasing the SiO2 line width, the number of Si-QDs on the SiO2-line was decreased evidently. Based on the results, we have succeeded in the one-dimensional arrangement of Si-QDs on the ∼30 nm-width SiO2 line-patterns.