Abstract
We studied liquid crystal (LC) aligning capabilities on a treated SiOx thin-film surface by 45° evaporation with an electron beam system. A uniform vertical LC alignment on SiOx thin-film surfaces was achieved. A high pretilt angle of about 86.5° was obtained. A good LC alignment on treated SiOx thin-film layers by 45° evaporation with electron beam was also observed at an annealing temperature of 250 °C. The high pretilt angle and the good thermal stability of LC alignment on SiOx thin-films by 45° obliqued electron beam evaporation can be achieved.
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