Abstract
Heteroepitaxial CoSi2 layers have been made by ion beam synthesis and solid phase epitaxy in Si〈111〉 substrates. Using the x-ray rocking curves of the asymmetric (331) reflections we are able to determine very accurately the relative amount of aligned (type A) and twinned (type B) CoSi2 in samples with different thicknesses. It is shown that for epilayers thinner than 360 Å, the relative amount of type A CoSi2 decreases from 100% to 30%.
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