Abstract
An algorithm for calculating the defect structure of semiconductor silicon crystals was proposed. The proposed approach makes it possible to calculate the sizes, distribution densities of grown-in microdefects at any point of the crystal. Calculations are performed by using and analyzing the thermal conditions of crystal growth in the temperature range from 1683 K to 300 K. The algorithm flowchart is given.
Highlights
Semiconductor silicon includes dislocation-free single crystals of silicon, which were grown by the Czochralski (CZ-Si) and floating zone melting (FZ-Si)
The defect formation in accordance with the diffusion model occurs in three stages [3]: (i) the formation of impurity complexes near the crystallization front; (ii) the formation, growth, and Vitalyi Igorevich Talanin et al.: Algorithm for Calculating the Initial Defect Structure of Semiconductor Silicon coalescence of precipitates during cooling of the crystal from the crystallization temperature to room temperature; and (iii) the formation of microvoids or dislocation loops at temperatures ≤ 1423 depending on the growth parameter ⁄
Mathematical models of the formation of grown-in microdefects gave the equivalent of the object, which in mathematical form reflects its most important properties
Summary
Semiconductor silicon includes dislocation-free single crystals of silicon, which were grown by the Czochralski (CZ-Si) and floating zone melting (FZ-Si). The task of developing virtual methods for investigating (controlling) the initial defect structure of silicon with the help of algorithms of formation and transformation, both individual types of defects, and the entire structure, depending on the thermal conditions of crystal growth is relevant. The solution of this problem is the purpose of this work
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