AlGaN-on-Si backside illuminated photodetectors for the extreme ultraviolet (EUV) range

Abstract

We report on the fabrication and characterization of solar blind Metal-Semiconductor-Metal (MSM) based photodetectors for use in the extreme ultraviolet (EUV) wavelength range. The devices were fabricated in the AlGaN-on- Si material system, with Aluminum Gallium Nitride (AlGaN) epitaxial layers grown on Si(111) by means of Molecular Beam Epitaxy. The detectors' IV characteristics and photoresponse were measured between 200 and 400 nm. Spectral responsivity was calculated for comparison with the state-of-the-art ultraviolet photodetectors. It reaches the order of 0.1 A/W at the cut-off wavelength of 360 nm, for devices with Au fingers of 3 μm width and spacing of 3 μm. The rejection ratio of visible radiation (400 nm) was more than 3 orders of magnitude. In the additional post-processing step, the Si substrate was removed locally under the active area of the MSM photodetectors using SF₆-based Reactive Ion Etching (RIE). In such scheme, the backside illumination is allowed and there is no shadowing of the active layer by the metal electrodes, which is advantageous for the EUV sensitivity. Completed devices were assembled and wire-bonded in customized TO-8 packages with an opening. The sensitivity at EUV was verified at the wavelengths of 30.4 and 58.4 nm using a He-based beamline. AlGaN photodetectors are a promising alternative for highly demanding applications such as space science or modern EUV lithography. The backside illumination approach is suited in particular for large, 2D focal plane arrays.