AlGaN/GaN MIS HEMT Modeling of Frequency Dispersion and Self-Heating Effects

Abstract

A compact model of AlN/GaN metal-insulator-semiconductor (MIS)-HEMTs which supports DC and small-signal AC with self-heating and frequency dispersion effects is developed. The model is implemented in Verilog-A source codes. The model parameters are extracted from measured data of the G-S-G transistor test structures that we fabricated. Both of self-heating and frequency dispersion characteristics are successfully handled in the model. The results show good agreements between device measurements and simulations.