AlGaN/GaN high-electron-mobility transistor with distributed gate grown on stripe-patterned Si(111) substrate

Abstract

We have successfully fabricated an AlGaN/GaN high-electron-mobility transistor with a distributed gate (DG-HEMT) on a stripe-patterned Si substrate. With the help of the stripe pattern, GaN film with low defect density could be deposited by two-step growth. The striped AlGaN/GaN structure could be obtained naturally by stopping the epitaxy process before coalescence. The DG-HEMT fabricated on the striped pattern layout shows good performance. The output characteristics were enhanced from 297 to 337 mA/mm, because the high quality of GaN grown on the patterned substrate can reduce the number of defects. In addition, the drain current was not decreased because the heat problem was reduced in the DG structure.