AlGaN-based solar-blind metal-semiconductor-metal photodetectors

Abstract

We reported on the fabrication and characterization of AlGaN metal-semiconductor-metal (MSM) photodetectors (PDs). AlGaN epitaxial material with an Al content of 0.6 were grown on sapphire substrates by metalorganic chemical vapor deposition (MOCVD). Schottky contacts were made with Ni/Pt/Au by the way of standard lift-off technique. We measured the performance of PDs. The cutoff wavelength is 276nm. Ultraviolet/visible contrast is about 3 orders of magnitude. The dark current is about 1nA at 1.5V bias and 1μA at 5.3V bias.