Abstract
A p-i-i-n type AlGaN heterostructure avalanche photodiodes (APDs) is proposed to decrease the avalanche breakdown voltage and to realize higher gain by using high-Al-content AlGaN layer as multiplication layer and low-Al-content AlGaN layer as absorption layer. The calculated results show that the designed APD can signifi-cantly reduce the breakdown voltage by almost 30%, and about sevenfold increase of maximum gain compared to the conventional AlGaN APD. The noise in designed APD is also less than that in conventional APD due to its low dark current at the breakdown voltage point. Moreover, the one-dimensional (1D) dual-periodic photonic crystal (PC) with anti-reflection coating filter is designed to achieve the solar-blind characteristic and cutoff wavelength of 282 nm is obtained.
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