Abstract
Proposed is a novel AlGaN/GaN field effect diode with relatively thick AlGaN barrier layer, named the Schottky-ohmic combined anode field effect diode (SOCFED) because of its distinguishing anode structure. To obtain a low turn-on voltage, a method of fluoride-based plasma exposure was used. The fabricated SOCFED has a turn-on voltage of 0 V and a breakdown voltage of over 200 V.
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