Abstract
A novel AlGaN/GaN-on-Si lateral current regulating diode (CRD) featuring a hybrid trench-gated cathode is proposed and experimentally demonstrated. By tailoring the recess depth and the length of the gate trench, the device characteristics including the knee voltage, the current density, and the current steadiness can be flexibly modulated. The CRD is capable of delivering an excellent steady current in a large voltage range of 0–200 V and a wide temperature range from −50 °C to 250 °C. Meanwhile, the regulating current exhibits small negative temperature coefficients less than −0.3 %/°C. Fast response capability of the CRD is validated by the pulse I–V measurements. The proposed CRD with such a new functionality together with the high performance is of great potential to expand the applications of AlGaN/GaN electronic devices.
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