Abstract
We report the fabrication of AlGaN/GaN high electron mobility transistors with multi‐MgxNy/GaN buffer. Compared with conventional HEMT devices with a low‐temperature GaN buffer, smaller gate and source‐drain leakage current could be achieved with this new buffer design. Consequently, the electron mobility was larger for the proposed device due to the reduction of defect density and the corresponding improvement of crystalline quality as result of using the multi‐MgxNy/GaN buffer.
Highlights
GaN-based materials demonstrate an outstanding potential for significantly advancing the solid-state electronic and optoelectronic technologies
It was found that GaN epitaxial layer prepared on multi-MgxNy/GaN buffer exhibited a reduced threading dislocation (TD) density and better crystalline quality
We extend the applicability of this buffer scheme by fabricating AlGaN/GaN high electron mobility transistors (HEMTs) on multi-MgxNy/GaN buffer
Summary
GaN-based materials demonstrate an outstanding potential for significantly advancing the solid-state electronic and optoelectronic technologies. There are still no suitable substrates that are commercially available for homoepitaxial growth of GaN thin films. Devices must be grown heteroepitaxially on sapphire or other substrates with an expense of high lattice mismatch. It was found that GaN epitaxial layer prepared on multi-MgxNy/GaN buffer exhibited a reduced TD density and better crystalline quality. We have reported high performance Schottky barrier diodes or photodetectors on multi-MgxNy/GaN buffer [1]. We extend the applicability of this buffer scheme by fabricating AlGaN/GaN high electron mobility transistors (HEMTs) on multi-MgxNy/GaN buffer. Physical and electrical properties of the fabricated HEMTs will be discussed afterward
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