Abstract
AbstractGaN and its heterojunction structures are attracting considerable attention as materials for high‐voltage, high‐frequency power device applications. This paper gives an overview of the basic device structure, process technology, and recent device performance achieved with AlGaN/GaN heterojunction FET structures. The emphasis is on the performance of power amplifiers developed for use in cellular base station transmitters and pseudo‐millimeter‐wave wireless access systems. Future research topics and prospects of nitride‐based transistors are also discussed. © 2003 Wiley Periodicals, Inc. Electron Comm Jpn Pt 2, 86(12): 52–60, 2003; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/ecjb.10161
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