Abstract
An improved method of average channel temperature and channel temperature profile determination is introduced in this paper applied to AlGaN/GaN HEMT using quasi-static I–V characterization and external heater. Particular HEMT resistances and threshold voltage were experimentally determined at different ambient temperatures from TLM measurements, HEMT output and transfer I–V characteristics. Negligible pinch-off area and leakage current dependence on drain voltage allows to obtain average temperature ∼77 °C for dissipated power 1.5 W using simple recurrent differential calculations. The HEMT channel temperature profile exhibiting maximum peripheral temperature ∼130 °C for dissipated power 1.5 W was simulated and verified utilizing the device electrical parameters variation.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
