AlGaN/GaN HEMT based hydrogen sensor with platinum nanonetwork gate electrode

Abstract

AlGaN/GaN high electron mobility transistor (HEMT) based hydrogen sensors incorporating platinum nanonetworks in the gate region were demonstrated. Pt nanonetworks with 2–3 nm diameter were synthesized by a simple and low-cost solution phase method, and applied to the gate electrode of transistor sensor. The HEMT with physically and electrically connected Pt nanonetwork gate showed good pinch-off and modulation of drain current characteristics. Compared to conventional Pt thin film AlGaN/GaN HEMT sensor, the Pt nanonetwork sensor has dramatically improved current response to hydrogen. Relative current change of Pt nanonetwork gated sensor in 500 ppm H2 balanced with Air ambient was 3.3 × 106% at VGS of −3.3 V, while 2.5 × 102% at VGS of −2.9 V for Pt film. This results from large increase in channel conductance induced by huge catalytic surface area of nanostructured Pt networks.