Abstract

AbstractA technique has been developed to grow low‐dislocation‐density AlGaN films in this paper. The AlGaN film is laterally overgrown on a trenched sapphire substrate with a low‐temperature (LT) GaNP buffer layer by metalorganic chemical vapour deposition (MOCVD). The optical charactertics and microstructure of the AlGaN films have been invesigated by means of cathodoluminescence (CL), high‐resolution X‐ray diffraction (HRXRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM) techniques. It is shown that the dislocation densities in the Al0.07Ga0.93N film are reduced to 8.7 x 108 cm–2 (by CL) and 2.7 x 109 cm–2 (by TEM) in the whole trenched sapphire, and 4.0 x 108 cm–2 (by CL) and 1.3 x 109 cm–2 (by TEM) in the trenched area. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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