Abstract
The authors demonstrate continuous wave (CW) operating at 482 nm AlGaN-cladding-free laser diodes (LDs) grown by plasma assisted molecular beam epitaxy (PAMBE). The maximum CW output power was 220 mW. The PAMBE LD structures were grown on (0001) GaN substrates obtained by hydride vapor phase epitaxy, with threading dislocation density of 5 × 107 cm−2. The PAMBE process was carried out in metal-rich conditions supplying high nitrogen flux (ΦN) of 2 μm/h during quantum wells (QWs) growth. The authors found that high ΦN improves quality of high In content InGaN QWs. The role of nitrogen in growth of InGaN on wurtzite (0001) GaN surface as well as influence of LD design on threshold current density is discussed.
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