Abstract
The successful room temperature continous wavelength operation of an index guided GaInP/AlGaInP double heterostructure laser diode (λ = 670 nm) has been achieved for the first time by using the combination of gas source molecular beam epitaxy with metal organic vapour phase epitaxy. The laser diodes show threshold currents of ∼ 60 mA at 25°C, and high characteristic temperatures of ∼130K. The maximum lasing temperature was 65°C.
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