Abstract
Reactive thermally evaporated transparent conducting indium tin oxide (ITO) layers are used as window material and for current spreading layers on AlGaInP light emitting diodes (LEDs). The sheet resistance of the ITO films deposited is of the order of 4.5 Ω/□ with up to 90% transmission in the visible region of the spectrum. In all cases, the devices incorporating the ITO layer gave a marginally greater output (10%) than the standard non-ITO devices. [This Letter first appeared in print in 1995, issue 19, p.1691–1692, and has been reprinted because of the significance of the corrections.]
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