Abstract
High-power and high-efficiency GaAs heterostructure field-effect transistors (FETs) are attracting tremendous attention in RF power amplifier applications. However, thermal effects can be an important issue in RF power devices, owing to the huge amount of heat generated during their operation. In this paper, the temperature-dependent characteristics of Al/sub 0.3/Ga/sub 0.7/As/In/sub 0.15/Ga/sub 0.85/ As doped-channel FETs (DCFETs) are investigated and compared with conventional pseudomorphic-HEMTs (pHEMTs) devices, in terms of their dc, microwave and RF power performance at temperatures ranging from room temperature to 150/spl deg/C. Due to conducting carriers being less influenced by temperature and the better Schottky diode characteristics that can be obtained in DCFETs, the intrinsic device parameters and output performance remain almost constant at high temperatures, which also results in better device reliability. The performance variation of DCFETs associated with temperatures from 25/spl deg/C to 150/spl deg/C all fall within a single digit, i.e., output power (P/sub out/, 16.2 dBm versus 15.8 dBm), power gain (G/sub p/, 16.6 dB versus 15.1 dB), power added efficiency (PAE, 34.2% versus 31.3%), which is not the case for conventional pHEMTs. Therefore, DC devices are very promising for microwave power device applications operating at high temperature.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
