Abstract
A new fabrication process has been successfully applied for the first time to the AlGaAs/GaAs laser diode. This new process includes vapor phase etching and subsequent MOVPE regrowth. Self-aligned LD's fabricated by this process have shown sufficiently good characteristics ( Ith = 50-60 mA, \eta_{D} = 40-45 percent), and good reliability (no degradation at least up to 1000 h:50°C, 5mW, automatic power control mode).
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