AlGaAs/GaAs Laser Diodes with GaAs Islands Active Region on a Si Substrate with Higher Characteristic Temperature

Abstract

AlGaAs/GaAs laser diodes with GaAs islands active region on a Si substrate have been fabricated by a conventional metal-organic chemical vapor deposition (MOCVD) method. Lasing via secondary state with lasing wavelengths of 776 and 771 nm under pulse and continuous wave (CW) conditions, respectively, has been observed. Temperature dependence characteristics show both, a higher characteristic temperature and higher internal quantum efficiency for the self-formed island laser than those of a quantum well (QW) laser on Si, for the whole temperature range (50–150 K) measured.