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Abstract
A heterojunction interfacial work function internal photoemission (HEIWIP) detector with a threshold frequency (f0) of 2.3 THz (λ0=128μm) is demonstrated. The threshold limit of ∼3.3THz (92 μm) due to the Al fraction being limited to ∼0.005, in order to avoid control and transition from alloy to isoelectronic doping behavior, was surpassed using AlGaAs emitters and GaAs barriers. The peak values of responsivity, quantum efficiency, and the specific detectivity at 9.6 THz and 4.8 K for a bias field of 2.0kV∕cm are 7.3A∕W, 29%, 5.3×1011 Jones, respectively. The background-limited infrared photodetector temperature of 20 K with a 60° field of view was observed for a bias field of 0.15kV∕cm. The f0 could be further reduced toward ∼1THz regime (∼300μm) by adjusting the Al fraction to offset the effect of residual doping, and/or lowering the residual doping in the barrier, effectively lowering the band bending.
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